The term “vacuum coating” covers both PVD and low-pressure CVD such as PECVD. The term PVD was not widely used until the 1990s but instead the process was more generally called “Vacuum Deposition” (e.g., Ref. If a plasma is used to aid the CVD process it is called plasma-enhanced CVD (PECVD) or in some cases “plasma deposition.” The rational for this PVD/CVD distinction was discussed in the Preface of the 1966 book Vapor Deposition edited by C.F. CVD is when the material to be deposited comes from a chemical vapor precursor. In PVD the vaporization is from a solid or liquid surface. in the book Vapor-Plating: The Formation of Coatings by Vapor-Deposition Techniques to differentiate PVD from Chemical Vapor Deposition (CVD). The term Physical Vapor Deposition (PVD) was first used in 1955 by C.F. If vaporization does not take place in a good vacuum the vapors condense in the vapor phase by multibody collisions to form particulates (soot). Vacuum deposition is accomplished by vaporizing a solid or liquid in “good vacuum” such that the vapor deposits as atoms or molecules on the surface to be coated. Mattox, in The Foundations of Vacuum Coating Technology (Second Edition), 2018 Vacuum Deposition–Vacuum Coating–Physical Vapor Deposition–Chemical Vapor Deposition Typical transport properties of the InSb thin films are shown in Table 31.1.ĭonald M. The surface of thin mica substrate is perfectly flat and stable under heating. The crystal growth process may be similar to MBE. Thus, InSb polycrystal thin films having a high electron mobility of 20,000–30,000 cm 2 V −1 s −1 and a thickness of 0.8 μm were grown on thin mica substrates and stably mass produced.
In this vacuum deposition method, the stoichiometry of InSb thin films is controlled by sequential evaporation of InSb from several source boats. In the method, using InSb as a source material, the specially programmed source temperatures and programmed time-dependent substrate heating were combined to grow stoichiometric InSb thin films on heated thin mica substrates ( Shibasaki, 1984, 1988, 1989, 2000). This technology was named multisource vacuum deposition method with operation of the programmed substrate temperature control. The vacuum deposition method was developed, where a specially designed production vacuum deposition system having multievaporation sources and substrate heater was used.